? 2012 ixys corporation, all rights reserved ds100435(01/12) v ces = 1200v i c110 = 105a v ce(sat) 2.2v symbol test conditions maximum ratings v ces t j = 25c to 150c 1200 v v cgr t j = 25c to 150c, r ge = 1m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 220 a i c110 t c = 110c 105 a i cm t c = 25c, 1ms 700 a ssoa v ge = 15v, t vj = 125c, r g = 1 i cm = 240 a (rbsoa) clamped inductive load @ 0.8 ? v ces p c t c = 25c 400 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062 in.) from case for 10 260 c v isol 50/60hz, 1 minute 2500 v~ f c mounting force 50..200/11..45 n/lb. weight 8 g MMIX1G120N120A3V1 g = gate e = emitter c = collector g c e isolated tab c e g (electrically isolated tab) features silicon chip on direct-copper bond (dcb) substrate isolated mounting surface 2500v~ electrical isolation optimized for low conduction losses square rbsoa anti-parallel ultra fast diode high current handling capability advantages high power density low gate drive requirement applications power inverters ups motor drives smps pfc circuits battery chargers welding machines lamp ballasts inrush current protection circuits genx3 tm 1200v igbt w/ diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 1200 v v ge(th) i c = 1ma, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 50 a note 2, t j = 125 c 5 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 100a, v ge = 15v, note 1 1.85 2.20 v t j = 125 c 1.95 v ultra-low-vsat pt igbt for 3khz switching advance technical information
ixys reserves the right to change limits, test conditions, and dimensions. MMIX1G120N120A3V1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 45 73 s c ies 9900 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 655 pf c res 240 pf q g 420 nc q ge i c = 120a, v ge = 15v, v ce = 0.5 ? v ces 70 nc q gc 180 nc t d(on) 40 ns t ri 67 ns e on 10 mj t d(off) 490 ns t fi 325 ns e off 33 mj t d(on) 30 ns t ri 75 ns e on 15 mj t d(off) 685 ns t fi 680 ns e off 58 mj r thjc 0.31 c/w r thcs 0.05 c/w r thja 30 c/w inductive load, t j = 125c i c = 100a, v ge = 15v v ce = 960v, r g = 1 note 3 inductive load, t j = 25c i c = 100a, v ge = 15v v ce = 960v, r g = 1 note 3 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. reverse diode (fred) symbol test conditions characteristic values (tj = 25c unless otherwise specified) min. typ. max. v f i f = 100a, v ge = 0v, note 1 1.8 v i rm 20 a t rr 700 ns r thjc 0.50 c/w i f = 50a, v ge = 0v, -di f /dt = 200a/ s, v r = 300v notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. part must be heatsunk for high-temp ices measurement. 3. switching times & energy losses may increase for higher v ce (clamp), t j or r g .
? 2012 ixys corporation, all rights reserved pin: 1 = gate 5-12 = emitter 13-24 = collector package outline MMIX1G120N120A3V1
ixys reserves the right to change limits, test conditions, and dimensions. MMIX1G120N120A3V1 fig. 1. output characteristics @ t j = 25oc 0 40 80 120 160 200 240 0 0.5 1 1.5 2 2.5 3 3.5 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 2. extended output characteristics @ t j = 25oc 0 40 80 120 160 200 240 280 320 360 012345678910 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v 5v fig. 3. output characteristics @ t j = 125oc 0 40 80 120 160 200 240 0 0.5 1 1.5 2 2.5 3 3.5 v ce - volts i c - amperes v ge = 15 v 13 v 11 v 7v 5v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 240a i c = 120a i c = 60a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 240 a t j = 25oc 120 a 60 a fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 4.04.55.05.56.06.57.07.58.0 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
? 2012 ixys corporation, all rights reserved MMIX1G120N120A3V1 fig. 7. transconductance 0 20 40 60 80 100 120 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 40 80 120 160 200 240 280 200 300 400 500 600 700 800 900 1000 1100 1200 v ce - volts i c - amperes t j = 125oc r g = 1 ? dv / dt < 10v / ns fig. 11. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 450 q g - nanocoulombs v ge - volts v ce = 600v i c = 120a i g = 10ma fig. 9. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1mhz c ies c oes c res
ixys reserves the right to change limits, test conditions, and dimensions. MMIX1G120N120A3V1 fig. 12. inductive switching energy loss vs. gate resistance 10 20 30 40 50 60 70 80 90 12345678910 r g - ohms e off - millijoules 4 8 12 16 20 24 28 32 36 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 960v i c = 100a i c = 50a fig. 17. inductive turn-off switching times vs. junction temperature 100 200 300 400 500 600 700 800 900 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f i - nanoseconds 350 450 550 650 750 850 950 1050 1150 t d(off) - nanoseconds t f i t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 960v i c = 50a, 100a fig. 15. inductive turn-off switching times vs. gate resistance 400 450 500 550 600 650 700 750 800 850 900 12345678910 r g - ohms t f i - nanoseconds 500 600 700 800 900 1000 1100 1200 1300 1400 1500 t d ( off ) - nanoseconds t f i t d(off) - - - - t j = 125oc, v ge = 15v v ce = 960v i c = 100a i c = 50a i c = 50a fig. 13. inductive switching energy loss vs. collector current 0 10 20 30 40 50 60 70 80 90 50 55 60 65 70 75 80 85 90 95 100 i c - amperes e off - millijoules 2 4 6 8 10 12 14 16 18 20 e on - millijoules e off e on - - - - r g = 1 ? , v ge = 15v v ce = 960v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0 10 20 30 40 50 60 70 80 90 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 2 4 6 8 10 12 14 16 18 20 e on - millijoules e off e on - - - - r g = 1 ? , v ge = 15v v ce = 960v i c = 100a i c = 50a fig. 16. inductive turn-off switching times vs. collector current 100 200 300 400 500 600 700 800 900 1000 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t f i - nanoseconds 300 400 500 600 700 800 900 1000 1100 1200 t d(off) - nanoseconds t f i t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 960v t j = 125oc t j = 25oc
? 2012 ixys corporation, all rights reserved fig. 19. inductive turn-on switching times vs. collector current 20 30 40 50 60 70 80 90 100 110 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t r i - nanoseconds 15 20 25 30 35 40 45 50 55 60 t d(on) - nanoseconds t r i t d(on) - - - - r g = 1 ? , v ge = 15v v ce = 960v t j = 125oc, 25oc fig. 20. inductive turn-on switching times vs. junction temperature 20 30 40 50 60 70 80 90 100 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r i - nanoseconds 22 26 30 34 38 42 46 50 54 t d(on) - nanoseconds t r i t d(on) - - - - r g = 1 ? , v ge = 15v v ce = 960v i c = 50a i c = 100a fig. 18. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 12345678910 r g - ohms t r i - nanoseconds 10 20 30 40 50 60 70 80 90 t d(on) - nanoseconds t r i t d(on) - - - - t j = 125oc, v ge = 15v v ce = 960v i c = 50a i c = 100a ixys ref: MMIX1G120N120A3V1(9p)01-17-12 MMIX1G120N120A3V1
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